ULSI Devices

by Simon M. Sze

Ultrahoch integrierte Schaltkreise (ULSI) - die n chste Schaltkreisgeneration - werden zwar noch nicht industriell eingesetzt, sind aber das Objekt intensiver Forschungsarbeit. Sie versprechen Vorteile im Stromverbrauch, arbeiten bei niedrigerer Spannung und sind schneller. Die Herausgeber dieses Buches haben die bekanntesten Forscher auf dem Gebiet der Schaltkreise gewonnen, um jeweils ein Kapitel zu ihrem eigenen Spezialgebiet zu schreiben. Kompetent...

• Format: Hardcover
• Language: English
• ISBN: 0471240672
• ISBN13: 9780471240679
• Release Date: May 2000
• Publisher: Wiley-Interscience
• Length: 744 Pages
• Weight: 2.70 lbs.
• Dimensions: 1.6" x 6.5" x 9.6"

Customer Reviews

MUST have for technologists and students

Got an opportunity to read this book when I borrowed it from my proff. Excellent book..Another masterpiece from sze. I have all his other ones.And every time you read them you discover something you had missed the previous time. Very pertinent to the 0.13m technology and low power consumption demands being made in the industry. Discusses the technology, physics and the problems faced in ulsi tech

Useful Book

The book deals with very wide aspects of ULSI technologies. It consist of three parts, hierarchically organized from device physics as the bottom level, device building blocks, and circuit building blocks as the high chip and system level. Naturally, the technical area is so wide that even the total pages of more than 700 seem too short. Among the many engineering issues, the editors selected some crucial subjects for each chapters. Although the book is designed for the readers to move from bottom level device physics to chip and system designs, chapters are rather independent. The book is useful for understanding specific technical issues as a reference material rather than a single volume textbook. Chapter 6, The Hot-Carrier Effect, belongs to Part II, Device Building Block. However, the subject is rather related to device physics than the building block. Thus, it is more suitable as the topics of Part I.