The Source/Drain Engineering of Nanoscale Germanium-Based Mos Devices

by Zhiqiang Li

Book Overview

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3662570262
• ISBN13: 9783662570265
• Release Date: June 2018
• Publisher: Springer
• Length: 59 Pages