Study of AlN/GaN HEMTs

by Yu Cao

The large polarization difference between AlN and GaN provides extremely high electron densities at the heterointerface covered by only 3-4 nm AlN barrier, which makes AlN/GaN heterojunction the... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3639336305
• ISBN13: 9783639336306
• Release Date: March 2011
• Publisher: VDM Verlag
• Length: 196 Pages
• Weight: 0.65 lbs.
• Dimensions: 0.5" x 6.0" x 9.0"