Silicon Carbide and Related Materials: 1999, Proceedings

by Gregory S. Rohrer and Calvin H. Carter

Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

• Format: Hardcover
• Language: English
• ISBN: 0878498540
• ISBN13: 9780878498543
• Release Date: January 2000
• Publisher: Trans Tech Publications
• Length: 1786 Pages