Si Detectors and Characterization for HEP and Photon Science Experiment: How to Design Detectors by TCAD Simulation

By Ajay Kumar Srivastava

Book Overview

Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.

• Format: Paperback
• Language: English
• ISBN: 3030195333
• ISBN13: 9783030195335
• Release Date: September 2020
• Publisher: Springer
• Length: 183 Pages
• Weight: 0.64 lbs.
• Dimensions: 0.4" x 6.1" x 9.2"