In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of...