Metal Gate Materials for CMOS Application

by Chih Feng Huang

Metal gates are expected to replace polysilicon gates beyond the 45nm technology node in order to achieve equivalent oxide thickness <1nm. Poly silicon gates suffer depletion effect, high resistivity,... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3639257316
• ISBN13: 9783639257311
• Release Date: May 2010
• Publisher: VDM Verlag
• Length: 196 Pages
• Weight: 0.65 lbs.
• Dimensions: 0.5" x 6.0" x 9.0"