LASER-INDUCED ETCHING: AND CHARACTERIZATION OF SEMICONDUCTOR NANOMATERIALS

By Khalid Omar

Bulk GaP is an indirect-gap (2.26 eV) semiconductor and is a poor light emitter. Therefore, the crystalline size reduction in the formation of porous GaP is the crucial step towards opto- electronic... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3844305092
• ISBN13: 9783844305098
• Release Date: May 2011
• Publisher: LAP Lambert Academic Publishing
• Length: 96 Pages
• Weight: 0.33 lbs.
• Dimensions: 0.2" x 6.0" x 9.0"