GaN Transistors for Efficient Power Conversion

by Michael De Rooij, Alex Lidow, David Reusch, et al.

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers...

• Format: Hardcover
• Language: English
• ISBN: 1118844769
• ISBN13: 9781118844762
• Release Date: September 2014
• Publisher: Wiley
• Length: 250 Pages
• Weight: 1.30 lbs.
• Dimensions: 0.7" x 6.7" x 9.6"