Gan Transistor Modeling for RF and Power Electronics: Using the Asm-Hemt Model

by Sheikh Aamir Ahsan, Ahtisham Ul Haq Pampori, Yogesh Singh Chauhan

The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects...

• Format: Paperback
• Language: English
• ISBN: 0323998712
• ISBN13: 9780323998710
• Release Date: June 2024
• Publisher: Woodhead Publishing
• Length: 260 Pages