The electrical transport properties studies on single GaN and InN nanowires were studied. First, we report studies on the effect of UV/ozone cleaning on n-type GaN nanowires. After subtraction of this contact resistivity from the total resistance of the nanowire, it was found that the ozone treatment reduced the apparent resistivity from 71 to 0.7 Ω cm. Second, a simple fabrication process for single GaN nanowire field effect transistor on Si...