Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL For Ultra-Thin Films of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors.- The DSL in Quantum Wells of Non-Parabolic Semiconductors.- The DSL in NIPI Structures of Non-Parabolic Semiconductors.- The DSL in Inversion Layers of Non-Parabolic Semiconductors.- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL for Quantum Wells of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- Conclusions and Future Research.
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