Backside sensing BioFET with enhanced performance: United States Patent 9976982

By: Cheng, Chun-Wen

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

• Format: Paperback
• Language: English
• ISBN: B08QWXPLB5
• ISBN13: 9798583162246
• Release Date: January 1
• Publisher: Independently Published
• Length: 28 Pages
• Weight: 0.20 lbs.
• Dimensions: 0.1" x 8.5" x 11.0"