A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design

by Douglas Weiser

Abstract:

A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key...

• Format: Paperback
• Language: English
• ISBN: 0530007967
• ISBN13: 9780530007960
• Release Date: May 2019
• Publisher: Dissertation Discovery Company
• Length: 210 Pages
• Weight: 1.10 lbs.
• Dimensions: 0.4" x 8.5" x 11.0"